KTA1021_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

DIP Type
Transistors
PNP Transistors
KTA1021
■ Features
● Excellent hFE Linearity
● 1 Watt Amplifier Application
● Complementary to KTC1020
TO-92M
6.0 ± 0.2
Unit:mm
1.0 ±0.1
0.50 ±0.1
1 23
1.50
3.0 ±0.1
1.60 (max)
4.0(min)
1. Emitter
2.Collector
3.Base
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature range
Symbol
Rating
Unit
VCBO
-35
VCEO
-30
V
VEBO
-5
IC
-500
mA
IB
-100
PC
400
mW
TJ
150
℃
Tstg
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
Base - emitter voltage
DC current gain
Collector output capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= -100 uA， IE=0
VCEO Ic= -1 mA， IB=0
VEBO IE= -100 uA， IC=0
ICBO VCB= -35 V , IE=0
IEBO VEB= -5V , IC=0
VCE(sat) IC=-100 mA, IB=-10mA
VBE(sat) IC=-100 mA, IB=-10mA
VBE VCE= -1V, IC= -100 mA
hFE VCE= -1V, IC= -100mA
Cob VCB= -6V, IE= 0,f=1MHz
fT
VCE= -6V, IC= -20mA
Min Typ Max Unit
-35
-30
V
-5
-100
nA
-100
-0.25
-1.2 V
-1
100
240
13
pF
200
MHz
■ Classification of hfe
Type
KTA1021-O
Range
100-200
KTA1021-Y
120-240
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