KTA1001_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
PNP Transistors
KTA1001
Transistors
■ Features
● Low Collector Saturation Voltage
● High Power Dissipation
1.70 0.1
0.42 0.1
0.46 0.1
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
Collector - Base Voltage
VCBO
-35
Collector - Emitter Voltage
VCEO
-20
Emitter - Base Voltage
VEBO
-8
Collector Current - Continuous
IC
-3
Collector Current - Pulse
ICP
-5
Base Current
IB
-0.5
Collector Power Dissipation
Ta = 25℃
0.5
PC
Tc = 25℃
1
Junction Temperature
TJ
150
Storage Temperature range
Tstg
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
VCBO
VCEO
VEBO
Ic= -1 mA， IE=0
Ic= -10 mA， IB=0
IE= -1 mA， IC=0
Collector-base cut-off current
ICBO VCB= -35 V , IE=0
Emitter cut-off current
IEBO VEB= -8V , IC=0
Collector-emitter saturation voltage
VCE(sat) IC=-3 A, IB=-75mA
Base - emitter saturation voltage
VBE(sat) IC=-3 A, IB=-75mA
Base - emitter voltage
VBE VCE= -2V, IC= -3 A
DC current gain
hFE(1)
hFE(2)
VCE= -2V, IC= -500mA
VCE= -2V, IC= -3 A
Collector output capacitance
Cob VCB= -10V, IE= 0,f=1MHz
Transition frequency
fT
VCE= -2V, IC= -500mA
■ Classification of hfe(1)
Type
KTA1001-O
Range
100-200
Marking
KO
KTA1001-Y
160-320
KY
1.Base
2.Collector
3.Emitter
Unit
V
A
W
℃
Min Typ Max Unit
-35
-20
V
-8
-100
nA
-100
-0.5
-1.2 V
-1.5
100
320
70
62
pF
170
MHz
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