KST9018-3_15 Datasheet, PDF (1/1 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

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NPN Transistors
KST9018
■ FFeeatures
● High current gain bandwidth product.
● ^{power dissipation.(PC=200mW)}
SOT-23-3
2.9 +0.2
-0.1
0.4 +0.1
-0.1
3
1
2
0.95 +0.1
-0.1
1.9 ^+0.1
-0.2
Transistors IC
Unit: mm
0.15 +0.02
-0.02
1. Base
2. Emitter
3. Collector
■ Absolute Maximum Ratings Ta = 25 ℃
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current to Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Symbol
Rating
Unit
VCBO
30
V
VCEO
15
V
VEBO
5
V
IC
50
mA
PC
200
mW
Tj
150
℃
Tstg
-55 to 150
℃
■ Electrical Characteristics Ta = 25
Parameter
Collector to base breakdown voltage
Collector to emitter breakdown voltage
Emitter to base breakdown voltage
Collector cut to off current
Emitter cut to off current
DC current gain
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Symbol
Testconditions
V(BR)CBO IC= 100 uA, IE=0
V(BR)CEO IC= 1mA, IB=0
V(BR)EBO IE=100 uA, IC=0
ICBO VCB=12V, IE=0
IEBO VEB= 3V, IC=0
hFE VCE=5V, IC= 1mA
VCE(sat) IC=10mA, IB= 1mA
VBE(sat) IC=10mA, IB= 1mA
fT VCE=5V, IC= 5mA,f=400MHz
■ Classification of hfe
Type
KST9018-L
KST9018-H
Range
70-105
105-190
Marking
J8
Min Typ Max Unit
30
V
15
V
5
V
0.05 uA
0.1 uA
70
190
0.5 V
1.4 V
600
MHz
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