KST9015 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
Features
Complementary to KST9014
PNP Transistors
KST9015
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
Transistors
Unit: mm
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
0.1+0.05
-0.01
Absolute Maximum Ratings Ta = 25
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Symbol
Rating
Unit
VCBO
-50
V
VCEO
-45
V
VEBO
-5
V
IC
-0.1
A
PC
0.2
W
Tj
150
Tstg
-55 to 150
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base Breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Symbol
Testconditons
VCBO Ic=-100uA, IE=0
VCEO Ic=-1mA, IB=0
VEBO IE=-100ìA, IC=0
ICBO VCB=-50V, IE=0
IEBO VEB=-5V, IC=0
hFE VCE=-5V, IC=-1mA
VCE(sat) IC=-100mA, IB=-10mA
VBE(sat) IC=-100mA, IB=-10mA
fT VCE=-5V, IC=-10mA,f=30MHZ
1.Base
2.Emitter
3.collector
Min Typ Max Unit
-50
V
-45
V
-5
V
-0.1
A
-0.1
A
200
1000
-0.3 V
-1 V
150
MHz
hFE Classification
Marking
Rank
hFE
M6
L
H
200 to 450
450 to 1000
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