KST9014-3_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

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Features
Excellent hFE linearity
Collector Current :IC=0.1A
Transistors
NPN Transistors
KST9014
SOT-23-3
2.9 +0.2
-0.1
0.4 +0.1
-0.1
3
Unit: mm
1
2
0.95 +0.1
-0.1
1.9 ^+0.1
-0.2
0.15 +0.02
-0.02
Absolute Maximum Ratings Ta = 25
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Symbol
Rating
Unit
VCBO
50
V
VCEO
45
V
VEBO
5
V
IC
0.1
A
PC
0.2
W
Tj
150
Tstg
-55 to 150
1. Base
2. Emitter
3. Collector
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base Breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Symbol
Testconditions
VCBO Ic=100uA, IE=0
VCEO Ic=1mA, IB=0
VEBO IE=100 A, IC=0
ICBO VCB=50V, IE=0
IEBO VEB=5V, IC=0
hFE VCE=5V, IC=1mA
VCE(sat) IC=100mA, IB=10mA
VBE(sat) IC=100mA, IB=10mA
fT VCE=5V, IC=10mA,f=30MHZ
Min Typ Max Unit
50
V
45
V
5
V
0.1
A
0.1
A
200
1000
0.3 V
1
V
150
MHz
hFE Classification
Type
Range
Marking
KST9014-L
KST9014-H
200-450
450-1000
J6
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