KST9012 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistor

SMD Type
TransistIoCrs
PNP Transistor
KST9012
Features
Excellent hFE liearity
Collector Current :IC=-0.5A
Absolute Maximum Ratings Ta = 25
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current to Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Symbol
Rating
Unit
VCBO
-40
V
VCEO
-25
V
VEBO
-5
V
IC
-500
mA
PC
300
mW
Tj
150
Tstg
-55 to 150
Electrical Characteristics Ta = 25
Parameter
Collector - base breakdown voltage
Collector - emitter breakdown voltage
Emitter - base breakdown voltage
Collector cut - off current
Collector cut - off current
Emitter cut - off current
DC current gain
Collector - emitter saturation voltage
Base - emitter voltage
Collector output capacitance
Transition frequency
Symbol
VCBO
VCEO
VEBO
ICBO
ICEO
IEBO
hFE
VCE(sat)
VBE(sat)
Cob
fT
Testconditons
Ic= -100ìA, IE=0
IC= -1 mA , IB=0
IE= -100ìA, IC=0
VCB=- 40V, IE=0
VCB=-20V, IE=0
VEB=- 5V, IC=0
VCE=-1V, IC= -50mA
IC= -500 mA, IB= -50mA
IC= -500 mA, IB=- 50mA
VCB=-10V,IE=0,f=1MHz
VCE=-6V, IC=-20mA,f=30MHz
hFE Classification
Marking
Rank
hFE
L
120 200
2T1
H
200 350
J
300 400
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Unit: mm
0.1+0.05
-0.01
1.Base
2.Emitter
3.collector
Min Typ Max Unit
-40
V
-25
V
-5
V
-0.1
A
-0.1
A
-0.1
A
120
400
-0.6 V
-1.2 V
5
pF
150
MHz
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