KST8550_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

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Features
Collector Current: IC=-1.5A
PNP Transistors
KST8550
SOT-23
2.9 +0.1
-0.1
0.4 +0.1
-0.1
3
Transistors
Unit: mm
1
2
0.95 +0.1
-0.1
1.9 ^+0.1
-0.1
0.1 +0.05
-0.01
Absolute Maximum Ratings Ta = 25
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter on voltage
output capacitance
Transition frequency
Symbol
Rating
Unit
VCBO
-40
V
VCEO
-25
V
VEBO
-5
V
IC
-1.5
A
PC
0.3
W
Tj
150
Tstg
-55 to 150
Symbol
Testconditions
VCBO IC=-100 A, IE=0
VCEO IC=-1mA, IB=0
VEBO IE=-100 A, IC=0
ICBO VCB=-40V, IE=0
ICEO VCE=-20V, IB=0
IEBO VEB=-5V, IC=0
VCE=-1V, IC=-100mA
hFE
VCE=-1V, IC=-800mA
VCE(sat) IC=-800mA, IB=-80mA
VBE(sat) IC=-800mA, IB=-80mA
VBE(on) IC=-1V,VCE=-10mA
Cob VCB=-10V,IE=0,f=1MHz
fT VCE= -10V, IC= -50mA,f=30MHz
hFE(1) Classification
Type
Range
Marking
KST8550
200-350
KST8550-L KST8550-H
120-200
144-202
Y2
KST8550-J
300-400
1.Base
2.Emitter
3.collector
Min Typ Max Unit
-40
V
-25
V
-5
V
-0.1
A
-1
A
-0.1
A
120
400
40
-0.5 V
-1.2 V
-1
V
20 pF
100
MHz
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