KST8550X_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
PNP Transistors
KST8550X
Transistors
■ Features
● Collector Power Dissipation: PC=0.3W
● Collector Current: IC=-1.5A
SOT-23
2.9 +0.1
-0.1
0.4 +0.1
-0.1
3
1
2
0.95 +0.1
-0.1
1.9 ^+0.1
-0.1
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Symbol
Rating
Unit
VCBO
-40
V
VCEO
-20
V
VEBO
-5
V
IC
-1.5
A
PC
0.3
W
Tj
150
℃
Tstg
-55 to 150
℃
■ Electrical Characteristics Ta = 25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Output capacitance
Transition frequency
■ Marking
Marking
+
Symbol
Test conditions
V(BR)CBO IC=-100μA, IE=0
V(BR)CEO IC=-1mA, IB=0
V(BR)EBO IE=-100μA, IC=0
ICBO VCB=-40V, IE=0
IEBO VEB=-5V, IC=0
VCE=-1V, IC=-100mA
hFE
VCE=-1V, IC=-800mA
VCE(sat) IC=-800mA, IB=-80mA
VBE(sat) IC=-800mA, IB=-80mA
Cob VCB=-10V,IE=0,f=1MHz
fT VCE= -6V, IC= -20mA ,f=30MHz
Unit: mm
0.1 +0.05
-0.01
1.Base
2.Emitter
3.collector
Min Typ Max Unit
-40
V
-20
-40
V
-5
V
-0.1 μA
-0.1 μA
200
350
40
-0.5 V
-1.2 V
20 pF
100
MHz
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