KST8550M_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SSMMDD TTypee
Transistors
■ Features
● Collector Current: IC=-0.8A
PNP Transistors
KST8550M
SOT-23
2.9 +0.1
-0.1
0.4 +0.1
-0.1
3
1
2
0.95 +0.1
-0.1
1.9 ^+0.1
-0.1
Unit: mm
0.1 ^+0.05
-0.01
1.Base
2.Emitter
3.collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
Rating
Unit
VCBO
-40
V
VCEO
-25
V
VEBO
-6
V
IC
-0.8
A
PC
0.3
W
Tj
150
Â¥
Tstg
-55 to 150
Â¥
■ Electrical Characteristics Ta = 25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage *
Emitter-base Breakdown voltage
Collector-base cut-off current
Collector-emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Symbol
Test c onditions
VCBO IC =- 100 u A , IE = 0
VCEO IC = -1mA , IB = 0
VEBO IE = -100 u A , IC = 0
ICBO VCB = -35V , IE = 0
ICEO VCE = -20 V , IB = 0
VCE = -1 V , IC = -1mA
hFE VCE = -1 V , IC = -100 mA
VCE = -1 V , IC = -800 mA
VCE(sat) IC = -800 mA , IB = -80 mA
VBE(sat) IC = -800 mA , IB = -80 mA
fT VCE = -6 V , IC = -20 mA , f = 30 MHz
* Pulse Test : pulse width ≤ 300 u s , duty cycle≤ 2%.
■ Classification of hfe(2)
Marking
Rank
L
Range
100-200
Y21
200-350
J
300-400
Min Typ Max Unit
-40
V
-25
V
-6
V
-0.1 uA
-0.1 uA
45
100
400
40
-0.5 V
-1.2 V
150
MHz
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