KST8050X_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

SMD Type
NPN Transistors
KST8050X
Transistors
■ Features
● Collector Power Dissipation: PC=0.3W
● Collector Current: IC=1.5A
SOT-23
2.9 +0.1
-0.1
0.4 +0.1
-0.1
3
1
2
0.95 +0.1
-0.1
1.9 ^+0.1
-0.1
Unit: mm
0.1 +0.05
-0.01
1.Base
2.Emitter
3.collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
Unit
Collector-Base Voltage
VCBO
40
V
Collector-Emitter Voltage
VCEO
20
V
Emitter-Base Voltage
VEBO
5
V
Collector Current -Continuous
IC
1.5
A
Collector Power Dissipation
PC
0.3
W
Junction Temperature
Tj
150
℃
Storage Temperature
Tstg
-55 to 150
℃
■ Electrical Characteristics Ta = 25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Output capacitance
Transition frequency
Symbol
Test conditions
V(BR)CBO IC= 100μA, IE=0
V(BR)CEO IC= 1mA, IB=0
V(BR)EBO IE= 100μA, IC=0
ICBO VCB= 40V, IE=0
IEBO VEB =5V, I C=0
VCE= 1V, IC= 100mA
hFE
VCE= 1V, IC= 800mA
VCE(sat) IC= 800mA, IB= 80mA
VBE(sat) IC= 800mA, IB= 80mA
Cob VCB= 10V,IE=0,f=1MHz
fT VCE= 6V, I C= 20mA ,f=30MHz
■ Marking
Marking
Y1₊
Min Typ Max Unit
40
V
20
40
V
5
V
0.1 μA
0.1 μA
200
350
40
0.5 V
1.2 V
20 pF
100
MHz
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