KST8050S_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

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Features
Collector Current: IC=0.5A
Transistors
NPN Transistors
KST8050S
SOT-23
2.9 +0.1
-0.1
0.4 +0.1
-0.1
3
Unit: mm
1
2
0.95 +0.1
-0.1
1.9 ^+0.1
-0.1
0.1 +0.05
-0.01
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-Base Voltage
VCBO
40
V
Collector-Emitter Voltage
VCEO
25
V
Emitter-Base Voltage
VEBO
5
V
Collector Current -Continuous
IC
0.5
A
Collector Dissipation
PC
0.3
W
Junction Temperature
Tj
150
Storage Temperature
Tstg
-55 to 150
1.Base
2.Emitter
3.collector
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base Breakdown voltage
Collector-base cut-off current
Collector-emitter cut-off current
Emitter-base cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Symbol
Testconditions
VCBO IC = 100 u A, I E = 0
VCEO IC = 1mA , IB = 0
VEBO IE = 100 u A, I C = 0
ICBO VCB = 40 V , IE = 0
ICEO VCE = 20 V , IB = 0
IEBO VEB = 5 V , IC = 0
VCE = 1 V , IC = 50 mA
hFE
VCE = 1 V , IC = 500 mA
VCE(sat) IC = 500 mA , IB = 50 mA
VBE(sat) IC = 500 mA , IB = 50 mA
fT VCE = 6 V , IC = 20 mA , f = 30 MHz
■ Classification of hfe(1)
Type
Range
Marking
KST8050S
200-350
KST8050S-L KST8050S-H
120-200
144-202
J3Y
KST8050S-J
300-400
Min Typ Max Unit
40
V
25
V
5
V
0.1
A
1
A
0.1
A
120
400
50
0.6 V
1.2 V
150
MHz
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