KST8050M_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

SSMMDD TTypee
Transistors
■ Features
● Collector Current: IC=0.8A
NPN Transistors
KST8050M
SOT-23
2.9 +0.1
-0.1
0.4 +0.1
-0.1
3
1
2
0.95 +0.1
-0.1
1.9 ^+0.1
-0.1
Unit: mm
0.1 ^+0.05
-0.01
1.Base
2.Emitter
3.collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
Rating
Unit
VCBO
40
V
VCEO
25
V
VEBO
6
V
IC
0.8
A
PC
0.3
W
Tj
150
Â¥
Tstg
-55 to 150
Â¥
■ Electrical Characteristics Ta = 25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage *
Emitter-base Breakdown voltage
Collector-base cut-off current
Collector-emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Symbol
Test c onditions
VCBO IC = 100 u A , IE = 0
VCEO IC = 1 mA , IB = 0
VEBO IE = 100 u A , IC = 0
ICBO VCB = 35V , IE = 0
ICEO VCE = 20 V , IB = 0
VCE = 1 V , IC = 1 mA
hFE VCE = 1 V , IC = 100 mA
VCE = 1 V , IC = 800 mA
VCE(sat) IC = 800 mA , IB = 80 mA
VBE(sat) IC = 800 mA , IB = 80 mA
fT VCE = 6 V , IC = 20 mA , f = 30 MHz
* Pulse Test : pulse width ≤ 300 u s , duty cycle≤ 2%.
■ Classification of hfe(2)
Marking
Rank
L
Range
100-200
Y11
200-350
J
300-400
Min Typ Max Unit
40
V
25
V
6
V
0.1 uA
0.1 uA
45
100
400
40
0.5 V
1.2 V
150
MHz
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