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KST50 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Darlington Transistors
SMD Type
NPN Darlington Transistors
KST50; KST51; KST52
(BST50; BST51; BST52)
Transistors
Features
High current (max. 0.5 A)
Low voltage (max. 80 V)
Integrated diode and resistor.
SOT-89
4.50+0.1
-0.1
1.80+0.1
-0.1
0.48+0.1
-0.1
0.53+0.1
-0.1
Unit: mm
1.50+0.1
-0.1
0.44+0.1
-0.1
3.00+0.1
-0.1
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
KST50
60
V
Collector-base voltage
KST51
VCBO
80
V
KST52
90
V
KST50
45
V
Collector-emitter voltage
KST51
VCEO
60
V
KST52
80
V
Emitter-base voltage
VEBO
5
V
Collector current (DC)
IC
0.5
A
Peak collector current
ICM
1.5
A
base current
IB
100
mA
Power dissipation Tamb 25 *
PD
1.3
W
Thermal resistance from junction to ambient *
Rth(j-a)
96
K/W
Thermal resistance from junction to solder point
Rth(j-s)
16
K/W
Junction temperature
Tj
150
Storage temperature
Tstg
-65 to +150
* Device mounted on a printed-circuit board, single sided copper, tinplated,
mounting pad for collector 6 cm2.
1. Base
2. Collector
3. Emiitter
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