KSS84 Datasheet, PDF (1/1 Pages) Guangdong Kexin Industrial Co.,Ltd – P-Channel Enhancement Mode Field Effect Transistor

SMD Type
TransistIoCrs
P-Channel Enhancement Mode Field Effect Transistor
KSS84
Features
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Also Available in Lead Free Version
Absolute Maximum Ratings Ta = 25 unless otherwise specified
Parameter
Drain-Source Voltage
Drain-Gate Voltage RGS 20KÙ
Gate-Source Voltage
Continuous
Drain Current *
Continuous
Total Power Dissipation *
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Symbol
VDSS
VDGR
VGSS
ID
Pd
RèJA
Tj, TSTG
Rating
-50
-50
20
-130
300
417
-55 to +150
* Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch;
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Unit
V
V
V
mA
mW
/W
Unit: mm
0.1+0.05
-0.01
1^1..^BG^asa^e te
22.ESmoituterrce
33..cDollreactionr
Electrical Characteristics Ta = 25
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-Off Delay Time
unless otherwise specified
Symbol
BVDSS
IDSS
IGSS
VGS(th)
RDS (ON)
gFS
Ciss
Coss
Crss
tD(ON)
tD(OFF)
Testconditons
VGS = 0V, ID = -250ìA
VDS = -50V, VGS = 0V, TJ = 25
VDS = -50V, VGS = 0V, TJ = 125
VDS = -25V, VGS = 0V, TJ = 25
VGS = 20V, VDS = 0V
VDS = VGS, ID = -1mA
VGS = -5V, ID = -0.100A
VDS = -25V, ID = -0.1A
VDS = -25V, VGS = 0V,f = 1.0MHz
VDD = -30V, ID = -0.27A,
RGEN = 50Ù, VGS = -10V
Min Typ Max Unit
-50
V
-15 ìA
-60 ìA
-100 nA
10 nA
-0.8
-2.0 V
10 Ù
0.05
S
45 pF
25 pF
12 pF
10
ns
18
ns
Marking
Marking
K84
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