KSP230 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – P-Channel Enhancement Mode Vertical D-MOS Transistor

SMD Type
Transistors
P-Channel Enhancement Mode
Vertical D-MOS Transistor
KSP230
Features
Direct interface to C-MOS,TTL,etc
High-speed switching
No secondary breakdown
SOT-223
6.50+0.2
-0.2
3.00+0.1
-0.1
4
Unit: mm
3.50^+0.2
-0.2
0.90+0.2
-0.2
7.00+0.3
-0.3
1
2
3
2.9
4.6
0.70+0.1
-0.1
1 gate
2,4 drain
3 source
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Drain-source voltage (DC)
VDS
-300
V
Gate-source voltage (DC) open drain
VGSO
20
V
Drain current (DC)
ID
-210
mA
Peak drain current
IDM
-0.75
A
Total power dissipation *
Ptot
1.5
W
Storage temperature
Tstg
-65 to +150
Operating junction temperature
Tj
150
thermal resistance from junction to ambient *
Rth j-a
83.3
K/W
*Device mounted on an epoxy printed-circuit board, 40 X 40 X 1.5 mm;
mounting pad for drain lead minimum 6 cm².
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