KRLML6402 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – HEXFET Power MOSFET

SMD Type
HEXFET Power MOSFET
KRLML6402
MOSFET
■ Features
● Ultra low on-resistance.
● P-Channel MOSFET.
● SOT-23 Footprint.
● Low profile(＜1.1mm).
● Available in tape and reel.
● Fast switching.
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Unit: mm
0.1+0.05
-0.01
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■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
Drain-Source Voltage
VDS
-20
Gate-to-source voltage
VGS
±12
Continuous drain curent,VGS@-4.5V , TA=25℃
Continuous drain curent,VGS@-4.5V , TA=70℃
-3.7
ID
-2.2
Pulsed drain current *1
IDM
-22
Power dissipation
Power dissipation
@TA=25℃
@TA=70℃
1.3
PD
0.8
Linear derating factor
0.01
Single Pulse Avalanche Energy *2
EAS
11
Maximum Junction-to-Ambient *3
RθJA
100
Junction and storage temperature range
TJ,TSTG
-55 to +150
*1Reptitive rating:pulse width limited by max.junction temperature.
*2. StartingTJ=25℃,L=1.65mH ,RG=25Ω,IAS=-3.7A.
*3.Surface mounted on 1''square single layer 1oz.copper FR4 board,steady state.
Unit
V
V
A
A
W
mW/℃
MJ
℃/W
℃
1
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