KRFR9210 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – HEXFET Power MOSFET

SMD Type
HEXFET Power MOSFET
KRFR9210
TransistIoCrs
Features
Available in Tape & Reel
Surface Mount
Fast Switching
P-Channel
Dynamic dv/dt Rating
Repetitive Avalanche Rated
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30+0.1
-0.1
0.50+0.8
-0.7
Unit: mm
0.80+0.1
-0.1
0.127
max
2.3
4.60^+0.15
-0.15
0.60+0.1
-0.1
1. Gate
2. Drain
3. Source
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Continuous Drain Current, VGS @ -10V,Tc = 25
ID
Continuous Drain Current, VGS @ -10V,Tc = 100
ID
Pulsed Drain Current*1
IDM
Power Dissipation Tc = 25
PD
Power Dissipation (PCB Mount) Ta = 25
PD
Linear Derating Factor
Linear Derating Factor (PCB Mount)
Gate-to-Source Voltage
VGS
Single Pulse Avalanche Energy*3
EAS
Avalanche Current *1
IAR
Repetitive Avalanche Energy *1
EAR
Peak Diode Recovery dv/dt *2
dv/dt
Operating Junction and Storage Temperature Range
TJ,TSTG
Junction-to-Case
R JC
Junction-to-Ambient
R JA
Junction-to-Ambient
R JA
*1 Repetitive rating; pulse width limited by max. junction temperature.
*2 ISD -1.9A, di/dt 70A/ s, VDD V(BR)DSS,TJ 150
*3 VDD=-50V,Starting TJ = 25 , L = 124 mH,RG = 25 , IAS = -1.9A.
Rating
-1.9
-1.2
-7.6
25
2.5
0.2
0.02
20
300
-1.9
2.5
-5
-55 to + 150
5
50
110
Unit
A
W
W/
V
mJ
A
mJ
V/ns
/W
/W
/W
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