KRFR6215 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – HEXFET Power MOSFET

SMD Type
HEXFET Power MOSFET
KRFR6215
TransistIoCrs
Features
Advanced Process Technology
Surface Mount
175 Operating Temperature
Fast Switching
P-Channel
Fully Avalanche Rated
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30+0.1
-0.1
0.50+0.8
-0.7
Unit: mm
0.80+0.1
-0.1
0.127
max
2.3
4.60^+0.15
-0.15
0.60+0.1
-0.1
1. Gate
2. Drain
3. Source
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Continuous Drain Current, VGS @ 10V,Tc = 25
ID
Continuous Drain Current, VGS @ 10V,Tc = 100
ID
Pulsed Drain Current*1
IDM
Power Dissipation TC = 25
PD
Linear Derating Factor
Gate-to-Source Voltage
VGS
Single Pulse Avalanche Energy*3
EAS
Avalanche Current *1
IAR
Repetitive Avalanche Energy
EAR
Peak Diode Recovery dv/dt *2
dv/dt
Operating Junction and Storage Temperature Range
TJ,TSTG
Junction-to-Case
R JC
Junction-to-Ambient
R JA
Junction-to-Ambient
R JA
*1 Repetitive rating; pulse width limited by max. junction temperature.
*2 ISD -6.6A, di/dt -620A/ s, VDD V(BR)DSS,TJ 175
*3 Starting TJ = 25 , L = 14mH,RG = 25 , IAS = -6.6A.
Rating
-13
-9
-44
110
0.71
20
310
-6.6
11
5
-55 to + 175
1.4
50
110
Unit
A
W
W/
V
mJ
A
mJ
V/ns
/W
/W
/W
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