KRF8910 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – HEXFET Power MOSFET

SMD Type
ICIC
HEXFET Power MOSFET
KRF8910
Features
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Drain- Source Voltage
VDS
Gate-to-Source Voltage
VGS
Continuous Drain Current, VGS @ 10V Ta = 25
ID
Continuous Drain Current,VGS @ 10V TC = 70
ID
Pulsed Drain Current *1
IDM
Maximum Power Dissipation Ta = 25
PD
Maximum Power Dissipation Ta = 70
Linear Derating Factor
Operating Junction and Storage Temperature Range TJ,TSTG
Junction-to-Drain Lead
R JL
Maximum Junction-to-Ambient *2,3
R JA
Single Pulse Avalanche Energy *4
EAS
Avalanche Current *1
IAR
*1 Repetitive rating; pulse width limited by max. junction temperature.
*2 when mounted on 1 inch square copper board.
*3 R is measured at TJ of approxmately 90
*4Starting TJ = 25 , L = 0.57mH, RG = 25 , IAS = 8.2A.
Rating
20
20
10
8.3
82
2
1.3
0.016
-55 to + 150
20
62.5
19
8.2
Unit
V
A
W
/W
/W
mJ
A
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