KRF7706 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – HEXFET Power MOSFET

SMD Type
ICIC
HEXFET Power MOSFET
KRF7706
Features
Ultra Low On-Resistance
P-Channel MOSFET
Very Small SOIC Package
Low Profile ( 1.2mm)
Available in Tape & Reel
TSSOP-8
Unit: mm
1,5,8: Drain
2,3,6,7: Source
4: Gate
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Drain- Source Voltage
VDS
Continuous Drain Current, VGS @ -10V @ Ta = 25
ID
Continuous Drain Current, VGS @ -10V @ Ta = 70
ID
Pulsed Drain Current *1
IDM
Power Dissipation *2
@Ta= 25
PD
Power Dissipation *2
@Ta = 70
PD
Linear Derating Factor
Gate-to-Source Voltage
VGS
Junction and Storage Temperature Range
TJ, TSTG
Maximum Junction-to-Ambient *2
R JA
*1 Repetitive rating; pulse width limited by max. junction temperature.
*2 Surface mounted on 1 in square Cu board
Rating
-30
-7
-5.7
-28
1.51
0.96
0.01
20
-55 to + 150
83
Unit
V
A
W
W
W/
V
/W
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