KRF7606 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – HEXFET Power MOSFET

SMD Type
HEXFET Power MOSFET
KRF7606
Features
Generation V Technology
Ultra Low On-Resistance
P-Channel MOSFET
Very Small SOIC Package
Low Profile ( 1.1mm)
Available in Tape & Reel
Fast Switching
ICIC
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Drain-Source Voltage
VDS
Continuous Drain Current, VGS @ -10V @ Ta = 25
ID
Continuous Drain Current, VGS @ -10V @ Ta = 70
ID
Pulsed Drain Current *1
IDM
Power Dissipation
@Ta= 25
PD
Power Dissipation
@Ta= 70
Linear Derating Factor
Gate-to-Source Voltage
VGS
Gate-to-Source Voltage Single Pulse tp 10 S
VGSM
Peak Diode Recovery dv/dt *2
dv/dt
Junction and Storage Temperature Range
TJ, TSTG
Maximum Junction-to-Ambient *3
R JA
*1 Repetitive rating; pulse width limited by max. junction temperature.
*2 ISD -2.4A, di/dt -130A/ s, VDD V(BR)DSS,TJ 150
*3 Surface mounted on FR-4 board, t 10sec.
Rating
-30
-3.6
-2.9
-29
1.8
1.1
14
20
30
-5.0
-55 to + 150
70
Unit
V
A
W
mW/
V
V
V/ns
/W
www.kexin.com.cn ¹