KRF7530 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – HEXFET Power MOSFET

SMD Type
HEXFET Power MOSFET
KRF7530
Features
Trench Technology
Ultra Low On-Resistance
Dual N-Channel MOSFET
Very Small SOIC Package
Low Profile ( 1.1mm)
Available in Tape & Reel
ICIC
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Drain- Source Voltage
VDS
Continuous Drain Current, VGS @ 4.5V,Ta = 25
ID
Continuous Drain Current, VGS @ 4.5V,TA = 70
ID
Pulsed Drain Current*1
IDM
Power Dissipation Ta = 25
PD
Power Dissipation Ta = 70
PD
Linear Derating Factor
Single Pulse Avalanche Energy *2
EAS
Gate-to-Source Voltage
VGS
Junction and Storage Temperature Range
TJ, TSTG
Junction-to-Ambient *1
R JA
1* Surface mounted on FR-4 board, t 10sec.
*2 Starting TJ = 25 , L = 2.6mH,RG = 25 , IAS = 5.0A.
Rating
20
5.4
4.3
40
1.3
0.8
10
33
12
-55 to + 150
100
Unit
A
A
W
mW/
mJ
V
/W
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