KRF7507 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – HEXFET Power MOSFET

SMD Type
HEXFET Power MOSFET
KRF7507
Features
Generation V Technology
Ultra Low On-Resistance
Dual N and P Channel MOSFET
Very Small SOIC Package
Low Profile (<1.1mm)
Available in Tape & Reel
Fast Switching
ICIC
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Drain-Source Voltage
VDS
Continuous Drain Current VGS Ta = 25
ID
Continuous Drain Current VGS Ta = 70
ID
Pulsed Drain Current *1
IDM
Power Dissipation
@Ta= 25
PD
Power Dissipation
@Ta= 70
Linear Derating Factor
Gate-to-Source Voltage
VGS
Gate-to-Source Voltage Single Pulse tp<10 S
VGSM
Peak Diode Recovery dv/dt *2
dv/dt
Junction and Storage Temperature Range
TJ, TSTG
Maximum Junction-to-Ambient*3
R JA
*1 Repetitive rating; pulse width limited by max. junction temperature.
N-Channel
P-Channel
20
-20
2.4
-1.7
1.9
-1.4
21
-14
1.25
0.8
10
12
16
5.0
-5.0
-55 to + 150
100
*2 N-Channel ISD 1.7A, di/dt 100A/ s, VDD V(BR)DSS, TJ 150
P-Channel ISD -1.2A, di/dt 50A/ s, VDD V(BR)DSS, TJ 150
*3 Surface mounted on FR-4 board, t 10sec.
Unit
V
A
W
mW/
V
V
V/ ns
/W
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