KRF7389 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – HEXFET Power MOSFET

SMD Type
HEXFET Power MOSFET
KRF7389
Features
Generation V Technology
Ultra Low On-Resistance
Complimentary Half Bridge
Surface Mount
Fully Avalanche Rated
ICIC
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Drain-Source Voltage
VDS
Continuous Drain Current Ta = 25
ID
Continuous Drain Current Ta = 70
ID
Pulsed Drain Current *1
IDM
Continuous Source Current (Diode Conduction)
IS
Power Dissipation
@Ta= 25
PD
@Ta= 70
Gate-to-Source Voltage
VGS
Single Pulse Avalanche Energy
EAS
IAR
Repetitive Avalanche Energy
EAR
Peak Diode Recovery dv/dt *2
dv/dt
Junction and Storage Temperature Range
TJ, TSTG
Maximum Junction-to-Ambient *3
R JA
*1 Repetitive rating; pulse width limited by max. junction temperature.
*2 N-Channel ISD 4.0A, di/dt 74A/ s, VDD V(BR)DSS, TJ 150
P-Channel ISD -2.8A, di/dt 1500A/ s, VDD V(BR)DSS, TJ 150
*3 Surface mounted on FR-4 board, t 10sec.
N-Channel
P-Channel
30
-30
7.3
-5.3
5.9
-4.2
30
-30
2.5
-2.5
2.5
1.6
20
82
140
4.0
-2.8
0.20
3.8
-2.2
-55 to + 150
50
Unit
V
A
W
V
mJ
A
mJ
V/ns
/W
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