KRF7379 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – HEXFET Power MOSFET

SMD Type
HEXFET Power MOSFET
KRF7379
Features
Generation V Technology
Ultra Low On-Resistance
Complimentary Half Bridge
Surface Mount
Fully Avalanche Rated
ICIC
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Drain-Source Voltage
VDS
Continuous Drain Current, VGS @ 10V @ Ta = 25
ID
Continuous Drain Current, VGS @ 10V @ Ta = 70
ID
Pulsed Drain Current *1
IDM
Power Dissipation
@Ta= 25
PD
Linear Derating Factor
Gate-to-Source Voltage
VGS
Peak Diode Recovery dv/dt *2
dv/dt
Junction and Storage Temperature Range
TJ, TSTG
Maximum Junction-to-Ambient *3
R JA
*1 Repetitive rating; pulse width limited by max. junction temperature.
*2 N-Channel ISD 2.4A, di/dt 73A/ s, VDD V(BR)DSS, TJ 150
P-Channel ISD -1.8A, di/dt 90A/ s, VDD V(BR)DSS, TJ 150
*3 Surface mounted on FR-4 board, t 10sec.
N-Channel
P-Channel
30
-30
5.8
-4.3
4.6
-3.4
46
-34
2.5
0.02
20
5.0
-5.0
-55 to + 150
50
Unit
V
A
W
W/
V
V/ns
/W
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