KRF7343 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – HEXFET Power MOSFET

SMD Type
HEXFET Power MOSFET
KRF7343
Features
Generation V Technology
Ultra Low On-Resistance
Dual N and P Channel MOSFET
Surface Mount
Fully Avalanche Rated
ICIC
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Drain-Source Voltage
VDS
Continuous Drain Current,VGS@10V , Ta = 25
ID
Continuous Drain Current ,VGS@10V , Ta = 70
ID
Pulsed Drain Current *1
IDM
Power Dissipation
@Ta= 25 *5
PD
Power Dissipation
@Ta= 70 *5
Gate-to-Source Voltage
VGS
Single Pulse Avalanche Energy *3
EAS
Avalanche Current
IAR
Repetitive Avalanche Energy
EAR
Peak Diode Recovery dv/dt *2
dv/dt
Junction and Storage Temperature Range
TJ, TSTG
Maximum Junction-to-Ambient *5
R JA
*1 Repetitive rating; pulse width limited by max. junction temperature.
N-Channel
P-Channel
55
-55
4.7
-3.4
3.8
-2.7
38
-27
2.0
1.3
20
72
114
4.7
-3.4
0.20
5.0
-5.0
-55 to + 150
62.5
*2 N-Channel ISD 4.7A, di/dt 220A/ s, VDD V(BR)DSS, TJ 150
P-Channel ISD -3.4A, di/dt -150A/ s, VDD V(BR)DSS, TJ 150
*3 N-Channel Starting TJ = 25 , L = 6.5mH RG = 25 , IAS = 4.7A.
P-Channel Starting TJ = 25 , L = 20mH RG = 25 , IAS = -3.4A.
*5 Surface mounted on FR-4 board, t 10sec.
*4 Pulse width 300 s; duty cycle 2%.
Unit
V
A
W
V
mJ
A
mJ
V/ns
/W
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