KRF7309 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – HEXFET Power MOSFET

SMD Type
HEXFET Power MOSFET
KRF7309
Features
Generation V Technology
Ultra Low On-Resistance
Dual N and P Channel Mosfet
Surface Mount
Available in Tape & Reel
Dynamic dv/dt Rating
Fast Switching
ICIC
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
10 Sec. Pulse Drain Current, VGS @ 10V Ta = 25
ID
Continuous Drain Current VGS @ 10V Ta = 25
ID
Continuous Drain Current VGS @ 10V Ta = 70
ID
Pulsed Drain Current *1
IDM
Power Dissipation
@Ta= 25 *3
PD
Linear Derating Factor (PCB Mount)*4
Peak Diode Recovery dv/dt *2
dv/dt
Gate-to-Source Voltage
VGS
Junction and Storage Temperature Range
TJ, TSTG
Junction-to-Amb. (PCB Mount, steady state)*4
R JA
*1 Repetitive rating; pulse width limited by max. junction temperature.
N-Channel
P-Channel
4.7
-3.5
4.0
-3.0
3.2
-2.4
16
-12
1.4
0.011
6.9
-6.0
20
-55 to + 150
90
*2 N-Channel ISD 2.4A, di/dt 73A/ s, VDD V(BR)DSS, TJ 150
P-Channel ISD -1.8A, di/dt 90A/ s, VDD V(BR)DSS, TJ 150
*3 Pulse width 300 s; duty cycle 2%.
*4 When mounted on 1" square PCB (FR-4 or G-10 Material).
Unit
A
W
W/
V/ ns
V
/W
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