KRF4905S Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – HEXFET Power MOSFET

SMD Type
TransistIoCrs
HEXFET Power MOSFET
KRF4905S
Features
Advanced Process Technology
Surface Mount
175 Operating Temperature
Fast Switching
P-Channel
Fully Avalanche Rated
TO-263
+0.2
4.57 _+0.1
-0.2
1.27-0.1
Unit: mm
1.27+0.1
-0.1
0.1max
+0.2
2.54-0.2
+0.1
5.08-0.1
0.81+0.1
-0.1
2.54
0.4+0.2
-0.2
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Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Continuous Drain Current, VGS @ -10V,Tc = 25
ID
Continuous Drain Current, VGS @ -10V,Tc = 100
ID
Pulsed Drain Current*1
IDM
Power Dissipation Ta = 25
PD
Power Dissipation Tc = 25
Linear Derating Factor
Gate-to-Source Voltage
VGS
Single Pulse Avalanche Energy*4
EAS
Avalanche Current *1
IAR
Repetitive Avalanche Energy
EAR
Peak Diode Recovery dv/dt *2
dv/dt
Operating Junction and Storage Temperature Range
TJ,TSTG
Junction-to-Case
R JC
Junction-to-Ambient
R JA
*1Repetitive rating; pulse width limited by max. junction temperature.
*2 ISD -38A, di/dt -270A/ s, VDD V(BR)DSS,TJ 175
* 3 When mounted on 1" square PCB
*4 Starting TJ = 25 , L = 1.3mH,RG = 25 , IAS = -38A.
Rating
-74
-52
-260
3.8
200
1.3
20
930
-38
20
-5
-55 to + 175
0.75
40
Unit
A
W
W/
V
mJ
A
mJ
V/ns
/W
/W
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