KRF2805S Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – HEXFET Power MOSFET

SMD Type
TransistIoCrs
HEXFET Power MOSFET
KRF2805S
Features
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175 Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
TO-263
+0.2
4.57 _+0.1
-0.2
1.27-0.1
Unit: mm
1.27+0.1
-0.1
0.1max
+0.2
2.54-0.2
+0.1
5.08-0.1
0.81+0.1
-0.1
2.54
0.4+0.2
-0.2
1₁g_Ga_ate_te
2₂d_Dra_rain_in
33sSoouurcrcee
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Continuous Drain Current, VGS @ 10V,TC = 25
ID
Continuous Drain Current, VGS @ 10V,TC = 100
ID
Pulsed Drain Current
IDM
Power Dissipation TC = 25
PD
Linear Derating Factor
Gate-to-Source Voltage
VGS
Single Pulse Avalanche Energy
EAS
Avalanche Current*1
IAR
Repetitive Avalanche Energy
EAR
Peak Diode Recovery dv/dt*
dv/dt
Operating Junction and Storage Temperature Range TJ,TSTG
Soldering Temperature, for 10 seconds
Junction-to-Case
R JC
Junction-to-Ambient (PCB mount)
R JA
* ISD 104A, di/dt 240A/ s, VDD V(BR)DSS,TJ 175
Rating
135
96
700
200
1.3
20
380
Fig.1.2
2
-55 to + 175
300
0.75
40
Unit
A
W
W/
V
mJ
A
mJ
V/ns
/W
Fig1. Unclamped Inductive Test Circuit
Fig 2. Unclamped Inductive Waveforms
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