KQB27P06 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – 60V P-Channel MOSFET

SMD Type
TransistIoCrs
60V P-Channel MOSFET
KQB27P06
Features
-27A, -60V, RDS(on) = 0.07 @VGS = -10 V
Low gate charge ( typical 33 nC)
Low Crss ( typical 120pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
175 maximum junction temperature rating
TO-263
+0.2
4.57 _+0.1
-0.2
1.27-0.1
Unit: mm
1.27+0.1
-0.1
0.1max
+0.2
2.54-0.2
+0.1
5.08-0.1
0.81+0.1
-0.1
2.54
0.4+0.2
-0.2
1¹G^ga^at^te^e
2²D^dr^ra^aiⁱnⁿ
3³S^so^ou^ur^rc^ce^e
Absolute Maximum Ratings Ta = 25
Parameter
Drain to Source Voltage
Drain Current Continuous TC=25
Drain Current Continuous TC=100
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy (Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy (Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power dissipation @ Ta=25
Power dissipation @ Tc=25
Derate above 25
Operating and Storage Temperature Range
Maximum lead temperature for soldering
purposes,1/8" from case for 5 seconds
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient *
Thermal Resistance Junction to Ambient
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
R JC
R JA
R JA
* When mounted on the minimum pad size recommended (PCB Mount)
Rating
-60
-27
-19.1
-108
25
560
-27
12
-7
3.75
120
0.8
-55 to 175
300
1.25
40
62.5
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/
/W
/W
/W
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