KQB12P20 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – 200V P-Channel MOSFET

SMD Type
TransistIoCrs
200V P-Channel MOSFET
KQB12P20
Features
-11.5A, -200V, RDS(on) = 0.47 @VGS = -10 V
Low gate charge ( typical 31 nC)
Low Crss ( typical 30pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
TO-263
+0.2
4.57 _+0.1
-0.2
1.27-0.1
Unit: mm
1.27+0.1
-0.1
0.1max
+0.2
2.54-0.2
+0.1
5.08-0.1
0.81+0.1
-0.1
2.54
0.4+0.2
-0.2
1¹G^ga^at^te^e
2²D^dr^ra^aiⁱnⁿ
3³S^so^ou^ur^rc^ce^e
Absolute Maximum Ratings Ta = 25
Parameter
Drain to Source Voltage
Drain Current Continuous TC=25
Drain Current Continuous TC=100
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy (Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy (Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power dissipation @ Ta=25
Power dissipation @ Tc=25
Derate above 25
Operating and Storage Temperature Range
Maximum lead temperature for soldering
purposes,1/8" from case for 5 seconds
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient *
Thermal Resistance Junction to Ambient
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
R JC
R JA
R JA
Rating
-200
-11.5
-7.27
-46
30
810
-11.5
12
-5.5
3.13
120
0.96
-55 to 150
300
1.04
40
62.5
* When mounted on the minimum pad size recommended (PCB Mount)
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/
/W
/W
/W
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