KPA2790GR Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – MOS Field Effect Transistor

SMD Type
MOS Field Effect Transistor
KPA2790GR
Features
Low on-state resistance
N-channel RDS(on)1 = 28 m MAX. (VGS = 10 V, ID = 3 A)
RDS(on)2 = 40 m MAX. (VGS = 4.5 V, ID = 3 A)
P-channel RDS(on)1 = 60 m MAX. (VGS = -10 V, ID = -3 A)
RDS(on)2 = 80 m MAX. (VGS = -4.5 V, ID = -3 A)
Low input capacitance
N-channel Ciss = 500 pF TYP.
P-channel Ciss = 460 pF TYP.
Built-in gate protection diode
Small and surface mount package
ICIC
Absolute Maximum Ratings Ta = 25
Parameter
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC)
Drain Current (pulse) *1
Total Power Dissipation (1 unit) *2
Total Power Dissipation (2 units) *2
Channel Temperature
Storage Temperature
Single Avalanche Current *3
Single Avalanche Energy *3
Symbol
N-Channel
P- Channel
Unit
VDSS
30
-30
V
VGSS
20
20
V
ID(DC)
6
6
A
ID(pulse)
24
24
A
PT
1.7
W
PT
2
W
Tch
150
Tstg
-55 to +150
IAS
6
-6
A
EAS
3.6
3.6
mJ
*1 PW 10 s, Duty Cycle 1%
*2 Mounted on ceramic substrate of 2000 mm2 x 1.6 mm
*3 Starting Tch = 25 , VDD =1/2 X VDSS, RG = 25 , L = 100 H, VGS = VGSS 0 V
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