KPA1871 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – MOS Field Effect Transistor

SMD Type
ICIC
MOS Field Effect Transistor
KPA1871
Features
Can be driven by a 2.5-V power source
Low on-state resistance
RDS(on)1 = 26 m TYP. (VGS = 4.5 V, ID = 3.0 A)
RDS(on)2 = 27 m TYP. (VGS = 4.0 V, ID = 3.0 A)
RDS(on)3 = 38 m TYP. (VGS = 2.5 V, ID = 3.0 A)
Built-in G-S protection diode against ESD
TSSOP-8
Unit: mm
1 : Drain1
2 : Source1
3 : Source1
4 : Gate1
5 : Gate2
6 : Source2
7 : Source2
8 : Drain2
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Drain to Source Voltage (VGS = 0)
VDSS
30
V
Gate to Source Voltage (VDS = 0)
VGSS
12
V
Drain Current (DC)
ID(DC)
6
A
Drain Current (Pulse) *1
ID(pulse)
80
A
Total Power Dissipation *2
PT
2.0
W
Channel Temperature
Tch
150
Storage Temperature
Tstg
-55 to + 150
*1 PW 10 s, Duty cycle 1 %
*2 Mounted on ceramic substrate of 50 cm² X1.1 mm
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