KPA1816 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – MOS Field Effect Transistor

SMD Type
ICIC
MOS Field Effect Transistor
KPA1816
Features
1.8V drive available
Low on-state resistance
RDS(on)1 = 15 m TYP. (VGS = -4.5 V, ID = -4.5 A)
RDS(on)2 = 16 m TYP. (VGS = -4.0 V, ID = -4.5 A)
RDS(on)3 = 22.5 m TYP. (VGS = -2.5 V, ID = -4.5 A)
RDS(on)4 = 41.5 m TYP. (VGS = -1.8 V, ID = -2.5 A)
Built-in G-S protection diode against ESD
TSSOP-8
Unit: mm
1, 2, 3 : Source
4:
Gate
5, 6, 7, 8: Drain
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Drain to Source Voltage (VGS = 0)
VDSS
-12
V
Gate to Source Voltage (VDS = 0)
VGSS
8.0
V
Drain Current (DC) Ta = 25
ID(DC)
9.0
A
Drain Current (Pulse) *1
ID(pulse)
36
A
Total Power Dissipation(2 unit) *2
PT
2.0
W
Channel Temperature
Tch
150
Storage Temperature
Tstg
-55 to + 150
*1 PW 10 s, Duty cycle 1 %
*2 Mounted on ceramic substrate of 5000mm² X1.1 mm
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