KPA1792 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – MOS Field Effect Transistor

SMD Type
MOS Field Effect Transistor
KPA1792
Features
Low on-state resistance
N-channel RDS(on)1 = 26 m MAX. (VGS = 10 V, ID = 3.4 A)
RDS(on)2 = 36 m MAX. (VGS = 4.5 V, ID = 3.4 A)
RDS(on)3 = 42 m MAX. (VGS = 4.0 V, ID = 3.4 A)
P-channel RDS(on)1 = 36 m MAX. (VGS = -10 V, ID = -2.9 A)
RDS(on)2 = 54 m MAX. (VGS = -4.5 V, ID = -2.9 A)
RDS(on)3 = 65 m MAX. (VGS = -4.0 V, ID = -2.9 A)
Low input capacitance
N-channel Ciss = 760 pF TYP.
P-channel Ciss = 900 pF TYP.
Built-in gate protection diode
Small and surface mount package
ICIC
Absolute Maximum Ratings Ta = 25
Parameter
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC)
Drain Current (pulse) *1
Total Power Dissipation (1 unit) *2
Total Power Dissipation (2 units) *2
Channel Temperature
Storage Temperature
Symbol
N-Channel
P- Channel
Unit
VDSS
30
-30
V
VGSS
20
20
V
ID(DC)
6.8
5.8
A
ID(pulse)
27.2
23.2
A
PT
1.7
W
PT
2
W
Tch
150
Tstg
-55 to +150
*1 PW 10 s, Duty Cycle 1%
*2 Mounted on ceramic substrate of 2000 mm² X 1.6 mm
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