KPA1716 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – MOS Field Effect Transistor

SMD Type
MOS Field Effect Transistor
KPA1716
Features
Low on-state resistance
RDS(on)1 = 12.5 m TYP. (VGS = -10 V, ID = -4 A)
RDS(on)2 = 17 m TYP. (VGS = -4.5 V, ID = -4 A)
RDS(on)3 = 19 m TYP. (VGS = -4.01 V, ID = -4 A)
Low Ciss : Ciss = 2100 pF TYP.
Built-in G-S protection diode
Small and surface mount package
ICIC
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Drain to Source Voltage (VGS = 0)
VDSS
-30
V
Gate to Source Voltage (VDS = 0)
VGSS
20
V
Drain Current (DC) Ta = 25
ID(DC)
8
A
Drain Current (Pulse) *1
ID(pulse)
32
A
Total Power DissipationTa = 25 *2
PT
2.0
W
Channel Temperature
Tch
150
Storage Temperature
Tstg
-55 to + 150
*1 PW 10 s, Duty cycle 1 %
*2 Mounted on ceramic substrate of 1200mm² X1.0 mm
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