KO3413 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – P-Channel Enhancement Mode Field Effect Transistor

SMD Type
P-Channel Enhancement Mode
Field Effect Transistor
KO3413
MOSFET
■ Features
● VDS (V) = -20V
● ID = -3 A
● RDS(ON) ＜ 97mΩ (VGS = -4.5V)
● RDS(ON) ＜ 130mΩ (VGS = -2.5V)
● RDS(ON) ＜ 190mΩ (VGS = -1.8V)
D
G
S
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Unit: mm
0.1+0.05
-0.01
1^1..^BG^asa^e te
22.ESmoituterrce
33..cDollreactionr
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
Drain-Source Voltage
VDS
-20
Gate-Source Voltage
VGS
±8
Continuous Drain Current *1
TA=25℃
-3
ID
TA=70℃
-2.4
Pulsed Drain Current *2
IDM
-15
Power Dissipation *1
TA=25℃
1.4
PD
TA=70℃
0.9
Thermal Resistance.Junction-to-Ambient *1
RθJA
125
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
*1The value of R θJA is measured with the device mounted on 1in ² FR-4 board with 2oz.
Copper, in a still air environment with TA =25℃
*2 Repetitive rating, pulse width limited by junction temperature.
Unit
V
V
A
W
℃/W
℃
1
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