KO3404 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – N-Channel Enhancement Mode Field Effect Transistor

SMD Type
TransistIoCrs
N-Channel Enhancement Mode Field Effect Transistor
KO3404
Features
VDS (V) = 30V
ID =5.8 A (VGS=10V)
RDS(ON) 28 m (VGS = 10V)
RDS(ON) 43 m (VGS = 4.5V)
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Unit: mm
0.1+0.05
-0.01
1^1..^BG^asa^e te
22.ESmoituterrce
33..cDollreactionr
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Drain-Source Voltage
VDS
30
V
Gate-Source Voltage
VGS
20
V
Continuous Drain TA=25
Current *1
TA=70
5.8
ID
4.9
A
Pulsed Drain Current *2
IDM
20
Power Dissipation *1 TA=25
TA=70
1.4
PD
W
1
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
*1The value of R èJA is measured with the device mounted on 1in ² FR-4 board with 2oz.
Copper, in a still air environment with TA =25
*2 Repetitive rating, pulse width limited by junction temperature.
Thermal Characteristics
Parameter
Symbol
Typ
Max
Maximum Junction-to-Ambient*1
Maximum Junction-to-Ambient *1
t 10s
Steady-State
RèJA
65
90
85
125
Maximum Junction-to-Lead *2
Steady-State
RèJL
43
60
*1The value of R èJA is measured with the device mounted on 1in ² FR-4 board with 2oz.
Copper, in a still air environment with TA =25
*2 . The R èJA is the sum of the thermal impedence from junction to lead R èJL and lead to ambient.
Unit
/W
/W
/W
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