KMBT3906 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
PNP Transistors
KMBT3906(MMBT3906)
Transistors
Features
Epitaxial planar die construction
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Unit: mm
0.1^+0.05
-0.01
Absolute Maximum Ratings Ta = 25
Parameter
Collector- Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current- Continuous
Collector Dissipation
Junction and Storage Temperature
Symbol
Rating
Unit
VCBO
-40
V
VCEO
-40
V
VEBO
-5
V
IC
-0.2
A
PC
0.3
W
TJ, Tstg
-55 to 150
1.Base
2.Emitter
3.collector
Electrical Characteristics Ta = 25
Parameter
Collector - base breakdown voltage
Collector - emitter breakdown voltage
Emitter- base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector- emitter saturation voltage
Base - emitter saturation voltage
Delay time
Rise time
Storage time
Fall time
Transition frequency
Symbol
Testconditons
VCBO Ic= -100 ìA IE=0
VCEO Ic= -1 mA IB=0
VEBO IE= -100 ìA IC=0
IcBO VCB= -40 V , IE=0
IcEO VCE= -40 V , VBE(off)=-3V
IEBO VEB= -5V , IC=0
VCE= -1V, IC= -10mA
hFE
VCE= -1V, IC= -50mA
VCE(sat) IC=-50 mA, IB= -5mA
VBE(sat) IC=-50 mA, IB= -5mA
td VCC=-3.0V,VBE=0.5V
tr IC=-10mA,IB1=-1.0mA
ts VCC=-3.0V,IC=-10mA
tf IB1=IB2=-1.0mA
fT VCE= -20V, IC= -10mA, f=100MHz
Min Typ Max Unit
-40
V
-40
V
-5
V
-0.1
A
-50 nA
-0.1
A
100
300
60
-0.3 V
-0.95 V
35
ns
35
225
ns
75
250
MHz
Marking
Marking
2A
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