KI8205T Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – Dual N-Channel High Density Trench MOSFET

SMD Type
MOSFET
Dual N-Channel High Density Trench MOSFET
KI8205T
Features
Super high dense cell trench design for low RDS(on).
Rugged and reliable.
Surface Mount package.
Unit: mm
1 pin mark
D1
G1
S1
D2
G2
S2
S1 1
D1/D2 2
S2 3
6 G1
5 D1/D2
4 G2
Absolute Maximum Ratings Ta = 25
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous @ TA = 25 *1
-Pulse *2
Drain-Source Diode Forward Current *1
Maximum Power Dissipation TA=25 *1
TA=75
Operating Junction and Storage Temperature Range
Thermal Resistance,Junction-to-Ambient
Symbol
VDS
VGS
ID
IDM
IS
PD
TJ,TSTG
RthJA
*1 Surface Mounted on FR4 Board , t 10sec .
*2 Pulse width limited by maximum junction temperature.
Rating
20
12
4.3
21.5
1.7
1.25
0.75
- 55 to 150
100
Unit
V
V
A
A
A
W
/W
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