KI8205A Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – Dual N-Channel Enhancement Mode Field Effect Transistor

SMD Type
MOSFET
Dual N-Channel Enhancement Mode Field Effect Transistor
KI8205A
Features
Small footprint due to small and thin package
Low drain-source ON resistance:
rDS(on) = 0.025 @ VGS = 4.5 V Max
rDS(on) = 0.029 @ VGS = 2.5V Max
G2
S2
S2
D
TSSOP-8
G1
S1
S1
D
TSSOP-8
Unit: mm
Absolute Maximum Ratings Ta = 25
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Maximum Power Dissipation TA = 25
TA = 70
Thermal Resistance,Junction-to-Ambient
Thermal Resistance,Junction-to-Case
Jumction temperature and Storage temperature
Symbol
VDS
VGS
ID
IDM
PD
R JA
R JC
Tj.Tstg
Rating
20
10
6.5
20
2.0
1.6
78
40
-55 to +150
Unit
V
V
A
A
W
W
/W
/W
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