KI7N10DY Datasheet, PDF (1/1 Pages) Guangdong Kexin Industrial Co.,Ltd – N-Channel MOSFET

SMD Type
N-Channel MOSFET
KI7N10DY
■ Features
● VDS (V) = 100V
● ID = 7A (VGS = 10V)
● RDS(ON) ＜ 350mΩ (VGS = 10V)
SOP-8
MOSFET
1.50 0.15
1 Source
2 Source
3 Source
4 Gate
5 Drain
6 Drain
7 Drain
8 Drain
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
Thermal Resistance.Junction- to-Ambient
Junction Temperature
Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
PD
RthJA
TJ
Tstg
Rating
100
±20
7
30
2
48
150
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate Threshold Voltage
Static Drain-Source On-Resistance
Maximum Body-Diode Continuous Current
Diode Forward Voltage
Symbol
VDSS
IDSS
IGSS
VGS(th)
RDS(On)
IS
VSD
Test Conditions
ID=250μA, VGS=0V
VDS=80V, VGS=0V
VDS=80V, VGS=0V, TC=85℃
VDS=0V, VGS=±20V
VDS=VGS , ID=250μA
VGS=10V, ID=3.5A
IS=7A,VGS=0V
Pulse test ; pulse width≤300μs, duty cycle≤2% (TA=25°C Unless Otherwise Noted)
■ Marking
Marking
7N10
Unit
V
A
W
℃/W
℃
Min Typ Max Unit
100
V
1
μA
30
±100 nA
1
3
V
350 mΩ
7
A
0.8 1.3 V
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