KI5515DC Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – Complementary 20-V (D-S) MOSFET

SMD Type
Complementary 20-V (D-S) MOSFET
KI5515DC
Features
TrenchFET Power MOSFETS
Ultra Low rDS(on) and Excellent Power
Handling In Compact Footprint
ICIC
Absolute Maximum Ratings TA = 25
Parameter
N-Channel
P-Channel
Symbol
Unit
5 secs Steady State 5 secs Steady State
Drain-Source Voltage
VDS
20
-20
V
Gate-Source Voltage
VGS
8
V
Continuous Drain Current (TJ = 150 )* TA = 25
5.9
4.4
-4.1
-3
A
ID
TA = 85
4.2
3.1
-2.9
-2.2
A
Pulsed Drain Current
IDM
20
-15
A
Continuous Source Current (Diode Conduction)*
IS
1.8
0.9
-1.8
-0.9
A
Maximum Power Dissipation*
TA = 25
2.1
1.1
2.1
1.1
W
PD
TA = 85
1.1
0.6
1.1
0.6
W
Operating Junction and Storage Temperature Range TJ, Tstg
-55 to 150
*Surface Mounted on 1" X 1" FR4 Board.
Thermal Resistance Ratings
Parameter
Symbol
Typ
Max
Unit
t 5 sec
50
60
Maximum Junction-to-Ambient*
RthJA
Steady State
90
110
/W
Maximum Junction-to-Case (Drain) Steady State RthJF
30
40
*Surface Mounted on 1" X 1" FR4 Board.
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