KI4300DY Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – N-Channel 30-V (D-S), Reduced Qg Fast Switching MOSFET with Schottky Diode

SMD Type
ICIC
N-Channel 30-V (D-S), Reduced Qg
Fast Switching MOSFET with Schottky Diode
KI4300DY
Features
TrenchFET Power MOSFET
LITTLE FOOT Plus^TM Integrated Schottky
PWM Optimized
Absolute Maximum Ratings Ta = 25
Parameter
Drain-Source Voltage (MOSFET)
Reverse Voltage (Schottky)
Gate-Source Voltage
Continuous Drain Current (TJ = 150 ) TA = 25
(MOSFET)*
TA = 70
Pulsed Drain Current (MOSFET)
Continuous Source Current (MOSFET Diode Conduction)*
Average Foward Current (Schottky)
Pulsed Foward Current (Schottky)
Maximum Power Dissipation (MOSFET)* TA = 25
TA = 70
Maximum Power Dissipation (Schottky)* TA = 25
TA = 70
Operating Junction and Storage Temperature Range
*Surface Mounted on 1" X 1" FR4 Board.
Symbol
VDS
VDA
VGS
ID
IDM
IS
IF
IFM
PD
TJ, Tstg
10 secs
Steady State
Unit
30
30
V
20
9
6.4
7
5.1
40
A
2.3
1.25
2.3
1.25
20
2.5
1.38
1.6
0.88
W
2.2
1.25
1.4
0.8
-55 to 150
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