KI2351DS Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – P-Channel 20-V (D-S) MOSFET

SMD Type
TransistIoCrs
P-Channel 20-V (D-S) MOSFET
KI2351DS
Features
TrenchFET Power MOSFET
PWM Optimized
100 % Rg tested
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Unit: mm
0.1+0.05
-0.01
1^1..^BG^asa^e te
22.ESmoituterrce
33..cDollreactionr
Absolute Maximum Ratings Ta = 25
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current(TJ=150 ) TC=25
---------------------------------------------- --TC=70
Continuous Drain Current(TJ=150 ) *1,2 TA=25
---------------------------------------------- --TA=70
Pulsed Drain Current
Continuous Source Drain Diode Current TC=25
Continuous Source Drain Diode Current *1,2 TA=25
Power Dissipation
Tc=25
--------------------------------------------- -- -Tc=70
Power Dissipation *1,2
TA=25
--------------------------------------------- - ---TA=70
Jumction Temperature
Storage Temperature
*1Surface mounted on 1" x 1" FR4 Board.
*2 t = 10 sec
Symbol
5 sec
Unit
VDS
-20
V
VGS
12
V
ID
-2.8
-2.4
A
ID
-2.2
-1.8
A
IDM
-10
-2
A
IS
-0.91
PD
2.1
1.5
W
PD
1.0
0.7
W
Tj
150
Tstg
-55 to +150
Thermal Resistance Ratings Ta = 25
Parameter
Maximum Junction-to-Ambient * t 5 sec
Maximum Junction-to-Foot (Drain) Steady State
* Surface Mounted on 1" X 1" FR4 Board.
Symbol
RthJA
RthJF
Typical
90
60
Maximum
115
75
Unit
/W
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