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KI2337DS Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – P-Channel 12-V (D-S) MOSFET
SMD Type
TransistIoCrs
P-Channel 12-V (D-S) MOSFET
KI2337DS
Features
TrenchFET Power MOSFET
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9+0.1
-0.1
Unit: mm
0.1+0.05
-0.01
11..BGasae te
22.ESmoituterrce
33..cDollreactionr
Absolute Maximum Ratings Ta = 25
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current(TJ=150 ) TC=25
---------------------------------------------- --TC=70
Continuous Drain Current(TJ=150 ) *1,2 TA=25
---------------------------------------------- --TA=70
Pulsed Drain Current
Continuous Source Drain Diode Current TC=25
Continuous Source Drain Diode Current *1,2 TA=25
Avalanche Current
L = 0 1 mH
Single-Pulse Avalanche Energy
L = 0 1 mH
Power Dissipation
Tc=25
--------------------------------------------- -- -Tc=70
Power Dissipation *1,2
TA=25
--------------------------------------------- - ---TA=70
Jumction Temperature
Storage Temperature
Soldering Recommendations (Peak Temperature)*3
Symbol
5 sec
Unit
VDS
-80
V
VGS
20
V
ID
-2.2
-1.75
A
ID
-1.2
-0.96
A
IDM
-7
-2.1
IS
A
-0.63
IAS
11
EAS
6.0
mJ
PD
2.5
1.6
W
PD
0.76
0.48
W
Tj
150
Tstg
-55 to +150
260
*1Surface mounted on 1" x 1" FR4 Board.
*2 t = 10 sec
*3 Maximum under steady state conditions is 166 /W.
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