KI2319DS Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – P-Channel 40-V (D-S) MOSFET

SMD Type
TransistIoCrs
P-Channel 40-V (D-S) MOSFET
KI2319DS
Features
TrenchFET Power MOSFET
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Unit: mm
0.1+0.05
-0.01
1^1..^BG^asa^e te
22.ESmoituterrce
33..cDollreactionr
Absolute Maximum Ratings Ta = 25
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ=150 ) * 1 TA=25
------------------------------------------------TA=70
Pulsed Drain Current *2
Continuous Source Current (diode conduction) *1
Symbol
VDS
VGS
ID
IDM
IS
Power Dissipation *1
TA=25
PD
-------------------------------------------------TA=70
Jumction Temperature
Tj
Storage Temperature
Tstg
* 1 Surface Mounted on FR4 Board.t 5 sec.
*2 Pulse width limited by maximum junction temperature.
5 sec
Steady State
Unit
-40
V
20
V
-3.0
-2.3
-2.4
-1.85
A
-12
A
-1.0
-0.62
A
1.25
0.75
0.8
0.48
W
150
-55 to +150
Thermal Resistance Ratings Ta = 25
Parameter
Maximum Junction-to-Ambient *1
Maximum Junction-to-Ambient *2 Steady State
Maximum Junction-to-Foot (Drain) Steady State
Symbol
RthJA
RthJF
Typical
75
120
40
Maximum
100
166
50
Unit
/W
* 1. Surface Mounted on FR4 Board, t 5 sec.
* 2. Surface Mounted on FR4 Board.
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