KI2311DS Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – P-Channel 1.8-V (G-S) MOSFET

SMD Type
Transistors
P-Channel 1.8-V (G-S) MOSFET
KI2311DS
Features
TrenchFET Power MOSFETS
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Unit: mm
0.1+0.05
-0.01
1^1..^BG^asa^e te
22.ESmoituterrce
33..cDollreactionr
Absolute Maximum Ratings Ta = 25
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 )*1,2 TA = 25
TA = 70
Pulsed Drain Current
Continuous Source Current (Diode Conduction)*1,2
Maximum Power Dissipation *1,2
TA = 25
TA = 70
Operating Junction and Storage Temperature Range
*1 Surface Mounted on FR4 Board.
*2 Pulse width limited by maximum junction temperature.
Symbol
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
5secs
Steady State
Unit
-8
V
8
-3.5
-3
-2.8
-2.4
A
-0.8
-0.6
0.96
0.71
W
0.62
0.46
-55 to 150
Thermal Resistance Ratings
Parameter
Maximum Junction-to-Ambient *
Maximum Junction-to-Foot (Drain)
t 5 sec
Steady-State
Steady-State
Symbol
RthJA
RthJF
Typical
100
140
60
Maximum
130
175
75
Unit
/W
* Surface Mounted on FR4 Board.
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