KI2310DS Datasheet, PDF (1/1 Pages) Guangdong Kexin Industrial Co.,Ltd – N-Channel Enhancement MOSFET

SMD Type
N-Channel Enhancement MOSFET
KI2310DS
MOSFET
■ Features
● VDS=20V
● ID = 6 .5A
● RDS(on)= 22mΩ@VGS=4.5V ,ID=6.5A
● RDS(on)= 30mΩ@VGS=2.5V ,ID=5.5A
G1
S2
SOT-23-3
2.9 +0.2
-0.1
0.4 +0.1
-0.1
3
3D
1
2
0.95 +0.1
-0.1
1.9 ^+0.1
-0.2
Unit: mm
0.15 +0.02
-0.02
1. Gate
2. Source
3. Drain
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
TA=25℃
TA=70℃
Power Dissipation
Junction Temperature
TA=25℃
TA=70℃
Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
PD
TJ
Tstg
Rating
20
±10
6.5
4.8
30
1.3
0.8
150
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance *1
Maximum Body-Diode Continuous Current
Diode Forward Voltage
*1: Pulse test: PW ≤300us duty cycle≤ 2%
Symbol
VDSS
IDSS
IGSS
VGS(th)
RDS(On)
gFS
IS
VSD
Test Conditions
ID=250μA, VGS=0V
VDS=20V, VGS=0V
VDS=20V, VGS=0V, TJ=55℃
VDS=0V, VGS=±10V
VDS=VGS , ID=250μA
VGS=4.5V, ID=6.5A
VGS=2.5V, ID=5.5A
VDS=5V, ID=6.5A
IS=1.6A,VGS=0V
■ Marking
Marking
2310
Unit
V
A
W
℃
Min Typ Max Unit
20
V
1
μA
10
±10 uA
0.45
1
V
22
mΩ
30
6
S
1.6 A
0.76 1.2 V
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