KI1N60DS Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – N-Channel MOSFET

SMD Type
N-Channel MOSFET
KI1N60DS
MOSFET
■ Features
● VDS (V) = 600V
● ID = 0.4 A (VGS = 10V)
● RDS(ON) ＜ 30 Ω (VGS = 10V)
D
SOT-23-3
2.9 +0.2
-0.1
0.4 +0.1
-0.1
3
1
2
0.95 +0.1
-0.1
1.9 ^+0.1
-0.2
Unit: mm
0.15 ^+0.02
-0.02
G
S
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current @ tp=10us
Tc=25℃
Tc=70℃
Power Dissipation
Tc=25℃
Single Pulse Drain−to−Source Avalanche Energy (IPK = 1.0 A)
Peak Diode Recovery (Note.1)
Thermal Resistance.Junction- to-Ambient
Thermal Resistance.Junction- to-Case
Junction Temperature
Storage Temperature Range
Note.1: IS = 1.5 A, di/dt ≤ 100 A/u s, VDD ≤ BVDSS
Symbol
VDS
VGS
ID
IDM
PD
EAS
dv/dt
RthJA
RthJC
TJ
Tstg
Rating
600
±30
0.4
0.25
1.5
0.4
13
4.5
141
2.7
150
-55 to 150
1. Gate
2. Source
3. Drain
Unit
V
A
W
mJ
V/ns
℃/W
℃
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